Metamorphic layers in multijunction solar cells

ABSTRACT

A method of forming a multijunction solar cell that includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another adjacent solar subcell.

This application is a division of U.S. patent application Ser. No.16/688,745 filed Nov. 19, 2019, which in turn was a continuation of U.S.patent application Ser. No. 15/965,219 filed Apr. 27, 2018, now U.S.Pat. No. 10,553,740, which in turn is a continuation of U.S. applicationSer. No. 13/956,122, filed Jul. 31, 2013, now U.S. Pat. No. 10,026,860,which in turn is a continuation and claims the benefit of priority ofU.S. application Ser. No. 12/758,390, filed Apr. 12, 2010, now U.S. Pat.No. 8,536,446, which is a continuation and claims the benefit ofpriority of U.S. application Ser. No. 11/445,793, filed Jun. 2, 2006,now U.S. Pat. No. 8,536,445. The disclosures of the previousapplications are incorporated herein by reference.

GOVERNMENT RIGHTS STATEMENT

This invention was made with Government support under contractFA9453-04-02-0041 awarded by the United States Air Force. The Governmenthas certain rights in the invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to the field of solar cell semiconductordevices, and particularly to integrated semiconductor structuresincluding a multijunction solar cell including a metamorphic layer.

2. Description of the Related Art

Photovoltaic cells, also called solar cells, are one of the mostimportant new energy sources that have become available in the pastseveral years. Considerable effort has gone into solar cell development.As a result, solar cells are currently being used in a number ofcommercial and consumer-oriented applications. While significantprogress has been made in this area, the requirement for solar cells tomeet the needs of more sophisticated applications has not kept pace withdemand. Applications such as satellites used in data communications havedramatically increased the demand for solar cells with improved powerand energy conversion characteristics.

In satellite and other space related applications, the size, mass andcost of a satellite power system are dependent on the power and energyconversion efficiency of the solar cells used. Putting it another way,the size of the payload and the availability of on-board services areproportional to the amount of power provided. Thus, as the payloadsbecome more sophisticated, solar cells, which act as the powerconversion devices for the on-board power systems, become increasinglymore important.

Solar cells are often fabricated in vertical, multijunction structures,and disposed in horizontal arrays, with the individual solar cellsconnected together in a series. The shape and structure of an array, aswell as the number of cells it contains, are determined in part by thedesired output voltage and current.

Inverted metamorphic solar cell structures such as described in U.S.Pat. No. 6,951,819 and M. W. Wanless et al., Lattice MismatchedApproaches for High Performance, III-V Photovoltaic Energy Converters(Conference Proceedings of the 31st IEEE Photovoltaic SpecialistsConference, Jan. 3-7, 2005, IEEE Press, 2005) present an importantstarting point for the development of future commercial products. Thestructures described in such prior art present a number of practicaldifficulties relating to the appropriate choice of materials andfabrication steps, in particular associated with the lattice mis-matchedlayers between the “lower” subcell (the subcell with the lowest bandgap)and the adjacent subcell.

Prior to the present invention, the materials and fabrication stepsdisclosed in the prior art have not been adequate to produce acommercial viable, manufacturable, and energy efficient solar cell.

SUMMARY OF THE INVENTION 1. Objects of the Invention

It is an object of the present invention to provide an improvedmultijunction solar cell.

It is an object of the invention to provide an improved invertedmetamorphic solar cell.

It is another object of the invention to provide in a multi-cellstructure, an interlayer between a second subcell and a thirdlattice-mis-matched subcell that maximizes the energy efficiency of thesolar cell.

It is still another object of the invention to provide a method ofmanufacturing an inverted metamorphic solar cell as a thin, flexiblefilm.

Additional objects, advantages, and novel features of the presentinvention will become apparent to those skilled in the art from thisdisclosure, including the following detailed description as well as bypractice of the invention. While the invention is described below withreference to preferred embodiments, it should be understood that theinvention is not limited thereto. Those of ordinary skill in the arthaving access to the teachings herein will recognize additionalapplications, modifications and embodiments in other fields, which arewithin the scope of the invention as disclosed and claimed herein andwith respect to which the invention could be of utility.

2. Features of the Invention

Briefly, and in general terms, the present invention provides a solarcell including a semiconductor body having an upper surface; amultijunction solar cell disposed on the upper surfaces; a first solarsubcell on the substrate having a first band gap; a second solar subcelldisposed over the first subcell and having a second band gap smallerthan the first band gap; and a grading interlayer disposed over thesecond subcell interlayer having a third band gap larger than the secondband gap, and a third solar subcell over the second solar subcell suchthat the third solar subcell is lattice mis-matched with respect to thesecond subcell and the third subcell has a fourth band gap smaller thanthe third band gap

In another aspect, the present invention provides a method of forming amultijunction solar cell comprising an upper subcell, a middle subcell,and a lower subcell by providing a first substrate for the epitaxialgrowth of semiconductor material; forming a first solar subcell on saidsubstrate having a first band gap; forming a second solar subcell oversaid first subcell having a second band gap smaller than said first bandgap; and forming a grading interlayer over said second subcell having athird band gap larger than said second band gap forming said at leastone lower subcell over said middle subcell such that said at least onelower subcell is lattice mis-matched with respect to said middle subcelland said third subcell has a fourth band gap smaller than said secondband gap.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features and advantages of this invention will be betterand more fully appreciated by reference to the following detaileddescription when considered in conjunction with the accompanyingdrawings, wherein:

FIG. 1 is an enlarged cross-sectional view of the solar cell accordingto the present invention at the end of the process steps of forming thelayers of the solar cell;

FIG. 2 is a cross-sectional view of the solar cell of FIG. 1 after thenext process step according to the present invention;

FIG. 3 is a cross-sectional view of the solar cell of FIG. 2 after thenext process step according to the present invention;

FIG. 4 is a cross-sectional view of the solar cell of FIG. 3 after thenext process step according to the present invention in which asurrogate substrate is attached;

FIG. 5A is a cross-sectional view of the solar cell of FIG. 4 after thenext process step according to the present invention in which theoriginal substrate is removed;

FIG. 5B is another cross-sectional view of the solar cell of FIG. 4after the next process step according to the present invention in whichthe original substrate is removed;

FIG. 6A is a top plan view of a wafer in which the solar cells accordingto the present invention are fabricated;

FIG. 6B is a bottom plan view of a wafer in which the solar cellsaccording to the present invention are fabricated;

FIG. 7 is a top plan view of the wafer of FIG. 6B after the next processstep according to the present invention;

FIG. 8 is a cross-sectional view of the solar cell of FIG. 5B after thenext process step according to the present invention;

FIG. 9 is a cross-sectional view of the solar cell of FIG. 8 after thenext process step according to the present invention;

FIG. 10 is a cross-sectional view of the solar cell of FIG. 9 after thenext process step according to the present invention;

FIG. 11 is a cross-sectional view of the solar cell of FIG. 10 after thenext process step according to the present invention;

FIG. 12 is a cross-sectional view of the solar cell of FIG. 11 after thenext process step according to the present invention;

FIG. 13 is a cross-sectional view of the solar cell of FIG. 12 after thenext process step according to the present invention;

FIG. 14 is a cross-sectional view of the solar cell of FIG. 13 after thenext process step according to the present invention;

FIG. 15 is a cross-sectional view of the solar cell of FIG. 14 after thenext process step according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENT

Details of the present invention will now be described includingexemplary aspects and embodiments thereof. Referring to the drawings andthe following description, like reference numbers are used to identifylike or functionally similar elements, and are intended to illustratemajor features of exemplary embodiments in a highly simplifieddiagrammatic manner. Moreover, the drawings are not intended to depictevery feature of the actual embodiment nor the relative dimensions ofthe depicted elements, and are not drawn to scale.

FIG. 1 depicts the multijunction solar cell according to the presentinvention after formation of the three subcells A, Band Con a substrate.More particularly, there is shown a substrate 101, which may be eithergallium arsenide (GaAs), germanium (Ge), or other suitable material. Inthe case of a Ge substrate, a nucleation layer 102 is deposited on thesubstrate. On the substrate, or over the nucleation layer 102, a bufferlayer 103, and an etch stop layer 104 are further deposited. A contactlayer 105 is then deposited on layer 104, and a window layer 106 isdeposited on the contact layer. The subcell A, consisting of an n+emitter layer 107 and a p-type base layer 108, is then deposited on thewindow layer 106.

It should be noted that the multijunction solar cell structure could beformed by any suitable combination of group III to V elements listed inthe periodic table subject to lattice constant and band gaprequirements, wherein the group III includes boron (B), aluminum (Al),gallium (Ga), indium (In), and thallium {T). The group IV includescarbon (C), silicon (Si), germanium (Ge), and tin (Sn). The group Vincludes nitrogen (N), phosphorous (P), arsenic {As), antimony (Sb), andbismuth (Bi).

In the preferred embodiment, the substrate 101 is gallium arsenide, theemitter layer 107 is composed of lnGa (Al)P, and the base layer iscomposed of lnGa(Al)P.

On top of the base layer 108 is deposited a back surface field (“BSF”)layer 109 used to reduce recombination loss.

The BSF layer 109 drives minority carriers from the region near thebase/BSF interface surface to minimize the effect of recombination loss.In other words, a BSF layer 109 reduces recombination loss at thebackside of the solar subcell A and thereby reduces the recombination inthe base.

On top of the BSF layer 109 is deposited a sequence of heavily dopedp-type and n-type layers 110 which forms a tunnel diode which is acircuit element to connect cell A to cell B.

On top of the tunnel diode layers 110 a window layer 111 is deposited.The window layer 111 used in the subcell B also operates to reduce therecombination loss. The window layer 111 also improves the passivationof the cell surface of the underlying junctions. It should be apparentto one skilled in the art, that additional layer(s) may be added ordeleted in the cell structure without departing from the scope of thepresent invention.

On top of the window layer 111 the layers of cell B are deposited: theemitter layer 112, and the p-type base layer 113. These layers arepreferably composed of InGaP and lno.o1sGaAs respectively, although anyother suitable materials consistent with lattice constant and band gaprequirements may be used as well.

On top of the cell B is deposited a BSF layer 114 which performs thesame function as the BSF layer 109. A p++/n++ tunnel diode 115 isdeposited over the BSF layer 114 similar to the layers 110, againforming a circuit element to connect cell B to cell C. A buffer layer115 a, preferably InGaAs, is deposited over the tunnel diode 115, to athickness of about 1.0 micron. A metamorphic buffer layer 116 isdeposited over the buffer layer 115 a which is preferably acompositionally step-graded InGaAlAs series of layers with monotonicallychanging lattice constant to achieve a transition in lattice constantfrom cell B to subcell C. The bandgap of layer 116 is 1.5 ev constantwith a value slightly greater than the bandgap of the middle cell B.

In one embodiment, as suggested in the Wanless et al. paper, the stepgrade contains nine compositionally graded steps with each step layerhaving a thickness of 0.25 micron. In the preferred embodiment, theinterlayer is composed of InGaAlAs, with monotonically changing latticeconstant.

FIG. 2 is a cross-sectional view of the solar cell of FIG. 1 after thenext process step according to the present invention in which a metalcontact layer 122 is deposited over the p+ semiconductor contact layer121. The metal is preferably a sequence of Ti/Au/Ag/Au layers.

FIG. 3 is a cross-sectional view of the solar cell of FIG. 2 after thenext process step according to the present invention in which anadhesive layer 123 is deposited over the metal layer 122. The adhesiveis preferably GenTak 330 (distributed by General Chemical Corp.).

FIG. 4 is a cross-sectional view of the solar cell of FIG. 3 after thenext process step according to the present invention in which asurrogate substrate, preferably sapphire, is attached. In the preferredembodiment, the surrogate substrate is about 40 mils in thickness, andis perforated with holes about 1 mm in diameter, spaced 4 mm apart, toaid in subsequent removal of the substrate.

FIG. 5A is a cross-sectional view of the solar cell of FIG. 4 after thenext process step according to the present invention in which theoriginal substrate is removed by a sequence of lapping and/or etchingsteps in which the substrate 101, the buffer layer 103, and the etchstop layer 104, are removed. The etchant is growth substrate dependent.

FIG. 5B is a cross-sectional view of the solar cell of FIG. 5A from thesolar cell of FIG. 5A from the orientation with the surrogate substrate124 being at the bottom of the Figure.

FIG. 6A is a top plan view of a wafer in which the solar cells accordingto the present invention are implemented.

FIG. 6B is a bottom plan view of the wafer with four solar cells shownin FIG. 6A. In each cell there are grid lines 501 (more particularlyshown in FIG. 10), an interconnecting bus line 502, and a contact pad503.

FIG. 7 is a bottom plan view of the wafer of FIG. 6B after the nextprocess step in which a mesa 510 is etched around the periphery of eachcell using phosphide and arsenide etchants.

FIG. 8 is a cross-sectional view of the solar cell of FIG. 5B after thenext process step according to the present invention in which thesacrificial buffer layer has been removed with 4 citric 1 HzOz solution.

FIG. 9 is a cross-sectional view of the solar cell of FIG. 8 after thenext process step according to the present invention in which the etchstop layer 104 is removed by HCl/H₂O solution.

FIG. 10 is a cross-sectional view of the solar cell of FIG. 9 after thenext process step according to the present invention in which aphotoresist mask (not shown) is placed over the contact layer 105 as thefirst step in forming the grid lines 501. The mask 200 is lifted off toform the grid lines 501.

FIG. 11 is a cross-sectional view of the solar cell of FIG. 10 after thenext process step according to the present invention in which grid lines501 are deposited via evaporation and lithographically patterned anddeposited over the contact layer 105. The grid lines are used as a maskto etch down the surface to the window layer 106 using a citricacid/peroxide etching mixture.

FIG. 12 is a cross-sectional view of the solar cell of FIG. 11 after thenext process step according to the present invention in which anantireflective (ARC) dielectric coating layer 130 is applied over theentire surface of the “bottom” side of the wafer with the grid lines501.

FIG. 13 is a cross-sectional view of the solar cell of FIG. 12 after thenext process step according to the present invention in which the mesa501 is etched down to the metal layer 122 using phosphide and arsenideetchants. The cross-section in the figure is depicted as seen from theA-A plane shown in FIG. 7.

One or more silver electrodes are welded to the respective contact pads.

FIG. 14 is a cross-sectional view of the solar cell of FIG. 13 after thenext process step according to the present invention after the surrogatesubstrate 124 and adhesive 123 are removed by EKC 922. Perforations aremade over the surface, each with a diameter is 0.033 inches andseparated by 0.152 inches.

The perforations allow the flow of etchant through the surrogatesubstrate 124 to permit its lift off.

FIG. 15 is a cross-sectional view of the solar cell of FIG. 14 after thenext process step according to the present invention in which anadhesive is applied over the ARC layer 130 and a cover glass attachedthereto.

It will be understood that each of the elements described above, or twoor more together, also may find a useful application in other types ofconstructions differing from the types of constructions differing fromthe types described above.

While the invention has been illustrated and described as embodied in amultijunction solar cell, it is not intended to be limited to thedetails shown, since various modifications and structural changes may bemade without departing in any way from the spirit of the presentinvention.

Without further analysis, the foregoing will so fully reveal the gist ofthe present invention that others can, by applying current knowledge,readily adapt it for various applications without omitting featuresthat, from the standpoint of prior art, fairly constitute essentialcharacteristics of the generic or specific aspects of this inventionand, therefore, such adaptations should and are intended to becomprehended within the meaning and range of equivalence of thefollowing claims.

2. A method of forming a multijunction solar cell comprising: providinga first substrate for epitaxial growth of semiconductor material;growing a first solar subcell on the first substrate having a first bandgap; growing a second solar subcell over the first subcell having asecond band gap smaller than the first band gap; growing an InGaAlAsgrading interlayer over the second solar subcell, wherein the InGaAlAsgrading interlayer includes a compositionally step-graded InGaAlAsseries of layers, and wherein the InGaAlAs grading interlayer has aconstant third band gap greater than the second band gap; and growing athird solar subcell over the grading interlayer having fourth band gapsmaller than the second band gap such that the third solar subcell islattice mismatched with respect to the second solar subcell to the thirdsolar subcell, wherein the InGaAlAs grading interlayer achieves atransition in lattice constant from the second solar subcell to thethird solar subcell.
 3. A method of forming a solar cell as defined inclaim 2, further comprising: depositing a bottom contact layer over thethird solar subcell; attaching a surrogate second substrate which isperforated with holes over the bottom contact layer; and subsequentlyremoving the first substrate.
 4. A method of forming a solar cell asdefined in claim 3, wherein the bottom contact layer is composed of asequence of Ti/Au/Ag/Au layers.
 5. A method of forming a solar cell asdefined in claim 3, wherein the first substrate is removed by a sequenceof lapping and/or etching steps.
 6. A method of forming a solar cell asdefined in claim 3, further comprising: forming a contact layer over thefirst substrate; and subsequent to removing the first substrate,depositing grid lines over the contact layer.
 7. A method of forming asolar cell as defined in claim 3, wherein the first substrate iscomposed of GaAs or Ge.
 8. A method of forming a solar cell as definedin claim 2, wherein one or more of the solar subcells includes anInGa(Al)P layer or an InGaP layer.
 9. A method as defined in claim 2,wherein the constant band gap of the InGaAlAs grading interlayer is 1.5eV.
 10. A method as defined in claim 2, further including forming anInGaAs buffer layer disposed below the second solar subcell and abovethe InGaAlAs grading interlayer.
 11. A method as defined in claim 10,wherein the InGaAlAs grading interlayer is disposed adjacent to theInGaAs buffer layer.
 12. A method as defined in claim 10, furtherincluding a tunnel diode disposed below the second solar subcell andover the InGaAs buffer layer, wherein the tunnel diode is a circuitelement to connect the second and third solar subcells.
 13. A method offabricating a multijunction solar cell assembly comprising: providing acover glass; and bonding a multijunction solar cell below the coverglass, the multijunction solar cell including: one or more grid lines; afirst contact layer below the one or more grid lines; a window layerbelow the first contact layer; a first solar subcell disposed below thewindow layer and having a first band gap; a second solar subcelldisposed below the first solar subcell and having a second band gapsmaller than the first band gap; an InGaAlAs grading interlayer disposedbelow the second solar subcell, wherein the InGaAlAs grading interlayerincludes a compositionally step-graded InGaAlAs series of layers, andwherein the InGaAlAs grading interlayer has a constant third band gapthroughout its thickness greater than the second band gap; a third solarsubcell disposed below the InGaAlAs interlayer that is latticemismatched with respect to the second solar subcell and having a fourthband gap smaller than the third band gap, wherein the InGaAlAs gradinginterlayer achieves a transition in lattice constant from the secondsubcell to the third subcell, and a second contact layer below the thirdsolar subcell and making electrical contact therewith.
 14. A method asdefined in claim 13, including an anti-reflective coating over the oneor more grid lines.
 15. A method as defined in claim 13, furtherincluding an InGaAs buffer layer disposed below the second solar subcelland above the InGaAlAs grading interlayer, wherein the InGaAlAs gradinginterlayer is disposed adjacent to the InGaAs buffer layer.
 16. A methodas defined in claim 15, wherein the InGaAs buffer layer has a thicknesson the order of 1 μm.
 17. A method as defined in claim 13, wherein theconstant band gap of the InGaAlAs grading interlayer is 1.5 eV.
 18. Amethod as defined in claim 13, wherein the InGaAlAs grading interlayerincludes a compositionally step-graded InGaAlAs series of lavers withmonotonically changing lattice constant.